Injection locking in distributed feedback semiconductor lasers

Injection locking properties of distributed feedback semiconductor lasers are studied systematically. Due to the high side mode suppression, these devices show different locking properties when compared to lasers with Fabry-Perot structures. The main result is the identification of four regimes for different injection levels. In particular, a symmetrical locking band at low optical injection level is confirmed. The presence of this symmetrical band can be exploited in some applications. As examples, the measurement of the linewidth enhancement factor and the phase-shift-keying modulation capability are reported.<
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