High-efficiency high-power GaInAsSb-AlGaAsSb double-heterostructure lasers emitting at 2.3 mu m

Double-heterostructure Ga/sub 0.84/In/sub 0.16/As/sub 0.14/Sb/sub 0.86/-Al/sub 0.5/Ga/sub 0.5/As/sub 0.04/Sb/sub 0.96/ diode lasers emitting at 2.27 mu m were grown by molecular beam epitaxy on GaSb substrates. For pulsed operation of broad-stripe lasers 300 mu m wide, differential quantum efficiencies as high as 50% and output power as high as 900 mW/facet were obtained for a cavity length of 300 mu m. Values of approximately 100% for the internal quantum efficiency and 43 cm/sup -1/ for the internal loss coefficient were determined from the measured dependence of differential quantum efficiency on cavity length. The threshold current density was as low as 1.5 kA/cm/sup 2/ for a cavity length of 700 mu m.<
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