Low-threshold oxide-confined GaInNAs long wavelength vertical cavity lasers

We report, for the first time, room temperature continuous-wave (CW) operation of GaInNAs vertical-cavity surface-emitting laser diodes emitting at a wavelength of 1.2 μm and grown all-epitaxially in a single step on a GaAs substrate. Oxide-apertured devices demonstrated CW threshold currents as low as 1 mA, slope efficiency above 0.045 W/A, and thermal impedance of 1.24 K/mW. Larger sized devices exhibited a pulsed threshold current density of 2-2.5 kA/cm
²
and slope efficiency above 0.09 W/A.