Microwave performance of SOI lateral dual carrier field effect transistors and integrated circuits (SOI LDCFET and SOI DCFEIC)

We have discovered and studied a new mode of operation of transistors and integrated circuits-dual carrier field effect transistors (DCFETs) and integrated circuits (DCFEICs). In this paper we present the device physics theory and some of the DC measurement results of one type of structure for our new mode of operation. We show that, with mature SOI technology, the SOI lateral DCFET (LDCFET) is predicted to have a better performance than the SOI MOSFET. With proper design, the cutoff frequency can be as high as 6000 GHz with an effective channel length of 0.0368 /spl mu/m and good microwave performance.