Evaluation of high-T/sub 0/ 1.3 /spl mu/m strained quantum well lasers on InGaAs ternary substrates by frequency response

We have fabricated 1.3 /spl mu/m strained quantum well lasers on InGaAs ternary substrate. A low threshold current density of <80 A/cm/sup 2//well and high T/sub 0/ of >100 K were simultaneously realized. Furthermore, it was found that dg/dn of the sample was enhanced by the effect of the deep potential well. By improving the quality of InGaAs substrates, larger dg/dn should be obtainable.