In2O3/TiO2 Heterostructure for Highly Responsive Low-Noise Ultraviolet Photodetector

High-performance metal-semiconductormetal ultraviolet (UV) photodetector was fabricated based on In
₂
O
₃
/TiO
₂
heterostructure. The In
₂
O
₃
/TiO
₂
heterostructure photodetector exhibits the maximum responsivity of 799.5 A/W and Gain of 3541.8 under 280 nm wavelength of illumination at 2 V, which is eight times higher than the In
₂
O
₃
photodetector. The In
₂
O
₃
/TiO
₂
photodetector exhibited lower noise-equivalent power (5.5 × 10
^-12
W. Hz-1/2) and higher detectivity (1.1 × 10
¹²
cm.Hz
^-1/2
W
^-1
) as compared to In
₂
O
₃
photodetector. Flicker noise dominated the In
₂
O
₃
/TiO
₂
photodetector with a corner frequency of 9 Hz. The enhanced performance of the device is assigned to improved electron-hole dissociation efficiency in In
₂
O
₃
via electron transfer from In
₂
O
₃
to TiO
₂
. This heterostructure-based photodetector with improved performance can pave the way for efficient UV photodetection applications.