Generalized Gated Four-Probe Method for Intrinsic Mobility Extraction With Van Der Pauw Structure

Measuring the mobility of thin-film transistors fabricated using newly developed semiconductors is difficult because of various factors, such as contact resistance. In this work, the generalized gated four-probe and van der Pauw structure were combined to precisely measure the carrier mobility of semiconductors. The method is geometry-independent, suitable for gate-dependent mobility in all operation regimes, and the test devices could be easily fabricated. Experimental verifications were performed on specially designed InGaZnO devices with different electrodes and at various temperatures. The developed approach enables simple and precise investigation of the semiconductor's properties via easily fabricated devices. In particular, the technique could be used for newly developed semiconductors that can only be patterned via low-resolution techniques, such as shadow mask patterning.