Intense THz radiation from InAs irradiated with femtosecond laser pulses in a magnetic field

Although it is considered that the generation mechanism for narrow band-gap semiconductors, such as InAs and InSb, originates from the photo-Dember field and the optical rectification besides carrier acceleration by the depletion field, its mechanism is not well understood. To investigate the mechanism, we applied a magnetic field of up to 5 T to InAs and observed saturation of THz-radiation from femtosecond-laser irradiated InAs in a high magnetic field.