To suppress photoexcited current of hydrogenated polysilicon TFTs with low temperature oxidation of polychannel

In this letter, a short time low temperature oxidation of poly-Si channel has been studied to suppress the photoexcited current of the hydrogenated poly-Si TFTs. The effect of the treatment, which contains different-time oxidation and different-time post-hydrogenation, on the dark-current and photocurrent of poly-Si TFTs under off state were investigated in detail. An optimal combination of both technologies has been proposed according to the investigation. The poly-Si TFTs treated with the optimal process can be operated well under a high illumination environment.