Ultra-low power monolithically integrated InGaAs/GaAs phototransceiver incorporating a modulated barrier photodiode and a quantum dot microcavity LED

We report the design and performance characteristics of GaAs-based low-power phototransceivers which offer large optical gain and very low power dissipation. In these monolithically integrated circuits we have integrated modulated barrier photodiodes with quantum dot-based microcavity LEDs. Quantum dots promise higher quantum efficiency, higher power, together with a more directed emission profile.