Surface-emitting lasers with GaAlAs/AlAs DBR grown by OMVPE

The performance of surface-emitting (SE) lasers with a Ga/sub 0.9/Al/sub 0.1/As/AlAs multilayer Bragg reflector grown by OMVPE (organometallic vapor-phase epitaxy) has been investigated. The reflectivity was 94% at a wavelength of 0.88 mu m, which is the lasing wavelength of the GaAs/GaAlAs SE laser. No sophisticated etching process for the GaAs substrate was necessary for inside mirror formation. An Au/SiO/sub 2/ semitransparent mirror, the reflectivity and transparency of which are about 94 and 3%, respectively, was used for a p-side reflector. Operating under a room-temperature pulsed condition, the lasers have a minimum threshold current of 95 mA and a lasing wavelength of 883 nm. The spectrum at I/I/sub th/=0.99 has two peaks. One, around 883 nm, is a lasing longitudinal mode, and the other, a small peak at around 870 nm, is a nonlasing neighboring longitudinal mode. Thus the longitudinal mode spacing is about 13 nm. Single-mode operation up to 1.22 times the threshold value was obtained.<
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