The effect of heterojunction properties of the diode temperature sensors on low temperature current transfer and temperature response curves

A new type of the silicon cryogenic diode temperature sensors (DTSs) with advanced technical characteristics has been developed on the base of highly doped n/sup ++/-p/sup +/ structures. For expansion of opportunities of the practical applications of the DTSs with the predicted performance characteristics we are experimentally and theoretically investigated the current transfer in the DTSs at helium temperatures. It is proposed that mechanisms of non-ohmic Mott's conductivity in the base of diode and the tunnel-limited current through the heterojunction barrier between the n- and p-parts of the impurity band determine the current-voltage characteristics (CVCs) and the temperature response curves (TRCs) of the DTSs at helium temperatures.