Effect of rapid thermal annealing on the properties of ZrB/sub x/(TiB/sub x/)-Si contacts

We investigated heat tolerance of ZrB/sub x/-n-n/sup +/-Si and TiB/sub x/-n-n/sup +/-Si barrier contacts exposed to rapid (60 s) thermal annealing (RTA) in hydrogen atmosphere at T=400, 600, 800 and 950/spl deg/C. Using XPS, AES and static I-V curve measurements, we have shown that ZrB/sub x/-n-n/sup +/-Si(TiB/sub x/-n-n/sup +/-Si) contacts retain their layer structure and barrier properties after RTA at 950(600)/spl deg/C.