Monte Carlo simulations of high energy electrons and holes in Si-n-MOSFET's

Monte Carlo simulations of high-energy electrons and holes in Si n-MOSFETs are presented. Key features of this work include the use of a suitable silicon model for carrier transport at high electric fields, an original impact ionization model, and sophisticated numerical techniques to speed up the calculation. The case of submicrometer Si n-MOSFETs is considered as a relevant application.<
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