Uniaxial silicon piezoresistive accelerometer

This work presents the theory and experimental studies for a silicon cantilever accelerometer with freestanding inertial mass. Such structure was 3D configured by anisotropic silicon etching on the both sides of the chip. The relative change of piezoresistance and the expression for sensitivity have been deduced. An analyse with finite element method based on ANSYS software was performed. Some elements about dynamical comportment are presented. Finally, the technological and experimental results are discussed.