Thermal Analysis of AlGaN/GaN High-Electron Mobility Transistors Using I–V Pulsed Characterizations and Infra Red Microscopy

This paper presents a method based on IV pulsed characterizations to estimate the junction temperature of AlGaN/GaN high-electron mobility transistors (AlGaN/GaN HEMTs). This technique allows a 2D plan evaluation of the average temperature of the transistor and the thermal resistance as a function of the dissipated power and the base plate temperature. In order to validate this method, our outcomes are compared with infra-red (IR) microscopy measurements realized with a Quantum Focus Instrument (QFI) Infrascope. The measured data show a good agreement with the results of our approach. Further analyses are carried out with IR microscopy to investigate the dependence of temperature on electrical parameters.