Field-emitter arrays for vacuum microelectronics

An ongoing program on microfabricated field-emitter arrays has produced a gated field-emitter tip structure with submicrometer dimensions and techniques for fabricating emitter arrays with tip packaging densities of up to 1.5*10/sup 7/ tips/cm/sup 2/. Arrays have been fabricated over areas varying from a few micrometers up to 13 cm in diameter. Very small overall emitter size, materials selection, and rigorous emitter-tip processing procedures have contributed to reducing the potential required for field emission to tens of volts. Emission current densities of up to 100 A/cm/sup 2/ have been achieved with small arrays of tips, and 100-mA total emission is commonly produced with arrays 1 mm in diameter containing 10000 tips. Transconductances of 5.0 mu S per tip have been demonstrated, indicating that 50 S/cm/sup 2/ should be achievable with tip densities of 10/sup 7/ tips/cm/sup 2/. Details of the cathode arrays and a variety of performance characteristics are discussed.<
>