Characteristic Length of Macaroni Channel MOSFET

A model of characteristic length for a macaroni MOSFET is introduced for the first time by deriving the two-dimensional Poisson's equation. By using the model of characteristic length describing the potential distribution, we presented the advantage of the thinner silicon channel structure in the sub-threshold region. The models of inner potential and surface potential are compared to the results from simulations and an agreement are observed. The models are useful for deriving sub-threshold characteristics and also for device design.