600 V 4H-SiC MOSFETs Fabricated in Commercial Foundry With Reduced Gate Oxide Thickness of 27 nm to Achieve IGBT-Compatible Gate Drive of 15 V

The measured electrical characteristics of 600 V planar-gate inversion-channel 4H-SiC power MOSFETs fabricated in a 6 inch commercial foundry with 27 nm gate oxide thickness are compared with 55 nm gate oxide devices. The High-Frequency Figures-of-Merit (HF-FOMs) of the SiC MOSFETs with 27 nm gate oxide were found to surpass that of commercially available 600 V P7 Si CoolMOS products for the first time. Statistical parametric distribution data and wafer-maps for the 27 nm devices are provided to demonstrate that excellent yield and uniformity can be achieved with the reduced gate oxide thickness. These devices can be operated at 15 V gate bias compatible with IGBT gate drivers.