PSPICE implementation of a new electro-thermal model for high power diodes

In this paper, a new PSPICE implemented electrothermal model of high power diodes is described. The model is based on an approximated solution of the minority carriers diffusion equation. In the first part of the paper, the model is briefly described pointing out the assumptions on which it is based and describing the implementation approach. Then, the model is validated by means of comparison with experimental measurements and with the results obtained from the other two reference models.