Enhanced Optoelectronic Properties of Bilayer Graphene/HgCdTe-Based Single- and Dual-Junction Photodetectors in Long Infrared Regime

We present novel p
⁺
-bilayer graphene (BLG) and mercury cadmium telluride (MCT)-based single- and dual-junction photodetectors, namely, p
⁺
-BLG/n
^-
-MCT and p
⁺
-BLG/n
^-
-MCT/n
⁺
-MCT, operating in long infrared regime. The optoelectronic characterizations utilizing Silvaco Atlas TCAD are validated by analytical modeling. All the devices demonstrate self-powered mode operation and exhibit more than 10
⁶
times enhancement in photocurrent density. The dual-heterojunction photodetector demonstrates rapid photocurrent switching with the rise and fall time of ~0.05 and ~0.013 ps, respectively, than that of single-heterojunction-based photodetectors. The highest external quantum efficiency (QE
_ext
), external photocurrent responsivity, and lowest noise equivalent power of 85.8%, 7.33 A/W, and 4.72 × 10
^-20
W, respectively, are found for the dual-heterojunction photodetector with a wavelength of 10.6 μm at 77 K. Such optimum photodetection performance is attributed to the presence of a huge amount of electric field (180 kV/cm) at n
^-
-n
⁺
heterojunction, which accelerates the photogenerated electrons resulting in effective photocurrent. It is further demonstrated that the temperature-dependent QE
_ext
with values >100% is due to the carrier multiplication effect in BLG.