Reflectivity dependence of threshold current in GaInAsP/InP surface emitting laser

A systematic study of changing the reflectivity of a Si/SiO/sub 2/ mirror for 1.3- mu m GaInAsP/InP surface-emitting lasers is discussed. An effective threshold current of 4.5 mA at 77 K continuous operation has been obtained. This indicates a possibility of a submilliampere threshold at 77 K and approximately=20 mA at 300 K by optimizing the mirror reflectivity.<
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