Optimization of Zn2SiO4 Anode Structure for Deep Ultraviolet Generation With Carbon Nanotube Emitters

Ultraviolet (UV) light is applied to various industrial and medical devices. In particular, deep UV light with short wavelengths could minimize the damage to human cells when it is used to virus and bacterial sterilization. We optimized the Zn
₂
SiO
₄
anode structure to improve deep UV light generation with a carbon nanotube (CNT) cold cathode based electron beam (C-beam) pumping. Annealing at 1000 °C and 400 mTorr produces anode with the highest deep UV intensity. Using a 100-nm SiO
_x
layer between Zn
₂
SiO
₄
and quartz substrate, the intensity of deep UV light at a wavelength of 226 nm was increased by 1.8 times.