Comparison of Extremely High-Temperature Characteristics of Planar and Three- Dimensional SiC MOSFETs

We demonstrated differences in the characteristics of planar and three-dimensional SiC MOSFETs at extremely high temperatures (around 500°C). There is a large threshold-voltage shift (ΔV
_th
) from 25 to 500°C in the SiC MOSFETs. The V
_th
of the three-dimensional SiC MOSFET is half that of the planar SiC MOSFET. A large amount of electron emissions from shallow interface traps causes the ΔV
_th
and is likely to affect the robustness of SiC MOSFETs against short circuits.