Influence of Doping Concentration on the Outputs of a Bent ZnO Nanowire

In this article, the governing equation on electric potential is established by coupling both the semiconducting characteristics and the piezo-effect property of a ZnO nanowire (ZNW). Carrier redistributions are solved for different doping concentrations while considering the effect of both types of charge carriers. The reason for the semiconducting characteristics of a ZNW to induce electric leakage in energy-harvesting is illustrated in detail and a proper initial carrier concentration, n
₀
or p
₀
, is obtained as follows: log(n
₀
/n
_i
) <; 5.0 for a n-type ZnO fiber and log(p
₀
/n
_i
) <; 5.0 for a p-type one under the intrinsic carrier concentration ni = 1.0 × 10
¹⁶
(1/m
³
), which is of significance in both the design and the practical applications of piezotronics and piezo-phototropic devices.