Reliable Five-Nanosecond Writing of Spin-Transfer Torque Magnetic Random-Access Memory

We report reliable 5 ns switching of spin-transfer torque magnetoresistive random-access memory devices of nominal size 43 nm and a resistance area product of 11 Ω·µm
²
. We measured 256 devices with a 100% write-error-rate (WER) yield at a WER floor of
$10^{-6}$
and a steep WER slope as a function of voltage. A single device had a WER less than
$10^{-10}$
for 5 ns write pulses. We show promising 3 ns switching performance, with a 94% WER yield at a
$10^{-6}$
WER floor, for 64 devices of nominal size 50 nm.