Fast Switching $\beta$ -Ga2O3 Power MOSFET With a Trench-Gate Structure

In this letter, trench-gate metal–oxide–semiconductor field-effect transistors on (010)
$\beta $
-Ga
₂
O
₃
epitaxial layer are fabricated. Enhancement mode is achieved by the gate-recess process, through thoroughly depleting the
$\beta $
-Ga
₂
O
₃
channel to get a positive threshold voltage. For the first time, by using a dynamic parameter test system, the Ga
₂
O
₃
MOSFET with 2-
$\mu \text{m}$
gate length is characterized to present short switching time, including turn-on time (
$\textit {t}_{ \mathrm{\scriptscriptstyle ON}}$
) of 28.6 ns and turn-off time (
$\textit {t}_{ \mathrm{\scriptscriptstyle OFF}}$
) of 94.0 ns. In addition, OFF-state interelectrode parasitic capacitances, including input capacitance (
$\textit {C}_{\text {iss}}$
) of 37 pF/mm, output capacitance (
$\textit {C}_{\text {oss}}$
) of 42 pF/mm, and reverse transfer capacitance (
$\textit {C}_{\text {rss}}$
) of 14 pF/mm are also obtained, which can account for the high switching speed. The static and dynamic switching properties of the trench-gate device show the potential of
$\beta $
-Ga
₂
O
₃
MOSFET for the high-speed switching applications.