Absorber and resistor contribution in the GTEM-cell

The GTEM-cell is described. The influence of absorbers and resistors is shown. The SWR and return loss as well as time domain measurements were performed on the GTEM-cell as well as on GTEM-cell without resistors, absorbers, and with open and metal end. The obtained data was, compared and the conclusion drawn. The GTEM-cell was modeled with the FEM method as well.