Impact of Thickness Control of Hf0.5Zr0.5O2 Films for the Metal–Ferroelectric–Insulator–Semiconductor Capacitors

Effects of controlling the film thickness of ferroelectric Hf_0.5Zr_0.5O₂ (HZO) thin film were investigated to figure out the important design strategies for the metal- ferroelectric-insulator-semiconductor (MFIS) capacitors. Even though the maximum remnant polarization (2Pr) was obtained to be 23.4 μC/cm² for the HZO capacitors with an HZO thickness of 20 nm, the ferroelectric memory window increased from 0.44 to 0.82 V with increasing the HZO thickness from 20 to 40 nm. The crystalline phases of the HZO thin films showed thickness-dependent variations with the relative dielectric permittivity.