Multiscale modeling in semiconductor processing

Process modeling in semiconductor device fabrication has become an accepted practice in the industry and commercial codes are available to model diffusion, ion implantation, dopant segregation and a variety of other processes. There is a certain level of empiricism associated with each of these models. This leads to the need where the empirical part of the model has to be constantly re-evaluated as processing goes through new generations. On the other hand, if completely self consistent, first-principles based models can be developed, it would be applicable through several generations of device technologies. In this paper, we attempt such an approach for one process: trench etching, gate definition and associated etching processes.