Abstract:
Mach-Zehnder modulators using 300-μm-long membrane phase shifters and SiN waveguides, in which InGaAsP core is buried with InP, are fabricated on Si. Devices exhibit 56-G...Show MoreMetadata
Abstract:
Mach-Zehnder modulators using 300-μm-long membrane phase shifters and SiN waveguides, in which InGaAsP core is buried with InP, are fabricated on Si. Devices exhibit 56-Gbit/s NRZ signal modulations with clear eye-openings.
Date of Conference: 03-07 March 2019
Date Added to IEEE Xplore: 25 April 2019
ISBN Information:
Conference Location: San Diego, CA, USA
Contents 