Effect of the electron blocking layer in dual-wavelength emission of InGaN/GaN MQW light-emitting diodes

`III-nitride' semiconductor based light emitting diodes (LEDs) have completely transformed the lighting industry due to its unique optical and electrical properties, which leads to higher efficiency and brightness. However, electron leakages, poor hole injection, and efficiency droop significantly affect the electrical and optical properties of InGaN/GaN LEDs that leads to the poor power conversion efficiency. These problems can be effectively minimized by introducing an Electron Blocking Layer (EBL) in conventional LEDs. The objective of this work is to investigate the effect of EBL layer (i.e., Al
_x
Ga
_1-x
N) on dual wavelength InGaN/GaN LEDs with different Al compositions (x). Different compositions of AlxGal-xN have been used to study the electrical and optical properties of LEDs and find out their optimal design parameters by using APSYS simulation program. The simulation results suggested that the composition of Al of the EBL and properties of quantum well has significant effects on the optical and electrical properties of InGaN/GaN LEDs. The gradually increasing composition (from x = 0 to 0.13) of the EBL shows large output power from the LED as it significantly reduces the electrons leakages of the device.