Design and producibility optimization of single-bias d.c. coupled 10 Gbit/s MMIC transimpedance amplifiers using a GaAs enhancement/depletion PHEMT technology

The design, fully market driven, is described of a d.c. coupled monolithic amplifier for 10 Gbit/s optical communications with 8.7 GHz operational bandwidth, 58 dB/spl Omega/ transimpedance gain and equivalent input noise current density lower than 6 pA//spl radic/Hz. The paper also discusses some important design issues on cost and producibility optimization of the circuit, which makes use of an original mixed inductive and capacitive peaking technique and of an advanced 0.2 /spl mu/m gate length enhancement-depletion GaAs HEMT technology.