Two-dimensional calibration of dopant transport models for submicron CMOS transistors

In most cases complex process models for damage enhanced diffusion (DED) are calibrated from one-dimensional measurements (vertical SIMS or spreading resistance). MOS transistors in the submicron regime however are inherently two-dimensional devices. In this paper we analyse, whether a one-dimensional calibration of an advanced DED model is sufficient for a correct lateral subdiffusion of the source/drain dopants.