Multi-band Monte Carlo method using anisotropic-analytical multi-band model

Fabrication of Si MOSFET's with a 0.1-/spl mu/m order gate length has now started. The Monte Carlo (MC) method is recognised as the most powerful simulation technique for devices of this size. In this paper we propose a new anisotropic-analytical band model, and we develop a multi-band MC simulator using this model to investigate hot carrier transport in real space.