Boron diffusion model refinement and its effect on the calculation of reverse short channel effect

The reverse short channel effect (RSCE) of flat channel profile nMOSFET was studied by modelling the dopant diffusion process and considering its parameter dependence. It was found that the binding energy between boron (B) and interstitial silicon (I) is one of the key parameters for the quantitative description of the boron diffusion and the RSCG.