Plasmonically Induced Transparency in Hexagon Boron Nitride–Graphene–Silica Grating-Based Structure Within the Upper Reststrahlen Band and Outside the Reststrahlen Band

Plasmonically induced transparency (PIT) in hexagon boron nitride (h-BN)-graphene-silica grating-based structure is proposed and demonstrated. By tuning the chemical potential of graphene and changing the geometry parameters of the proposed structure, PIT can be realized both within the upper reststrahlen (RS) band and outside the RS band. The group delay of the PIT window is analyzed and can be up to ~0.15 ps within the upper RS band via changing the chemical potential of graphene and the parameters of the silica grating. Apart from that, a refractive index (RI) sensor with a sensitivity of up to 0.336 μm per RI unit outside the RS band is proposed by changing the RI of the sensor media. The proposed structure may have the application in the graphene-h-BN-based slow light devices and optical sensors.