p-Type MOSFET Contact Resistance Improvement by Conformal Plasma Doping and Nanosecond Laser Annealing

This letter reports a new method using boron plasma doping and nanosecond laser annealing for further improvement of contact engineering. Up to 8% device performance improvement is demonstrated by using this technique in a conventional FinFET architecture. The key value of this letter relies on the plasma doping of fin vertical sidewalls and the super-activation of dopants, without any volume consumption between the epitaxial source and the drain. Furthermore, the TCAD simulation result points out that combining this method with the wrap-around contact structure can double the boost of transistor performance. We believe that this will bring us a new milestone in ultra-low contact resistance.