Investigation of Gate-Stress Engineering in Negative Capacitance FETs Using Ferroelectric Hafnium Aluminum Oxides

In this paper, we reported a ferroelectric HfAlO
_x
negative capacitor transistor with gate-stress (GS) engineering. Compared to control device, the HfAlO
_x
transistor with GS engineering percentage of
$\text{I}_{ \mathrm{\scriptscriptstyle ON}}$
enhancement and 27%
$\text{V}_{T}$
reduction under the assistance of the negative capacitance (NC) effect. The orthorhombic phase transition played a crucial role in realizing the NC effect. From the results of the material analysis, the theoretical Landau simulation and electrical measurement, we demonstrated that the GS is favorable for inducing orthorhombic phase crystallization of HfAlO
_x
and stabilizing the NC effect, which shows the potential for the application of advanced technology node.