Correction to “Trench Termination With SiO2-Encapsulated Dielectric for Near-Ideal Breakdown Voltage in 4H-SiC Devices” [Dec 18 1900-1903]

In the above letter
[1]
, the epi doping listed in
TABLE I
was wrong, and it should be
$8\times 10^{15}$
cm
⁻³
which is the same the value as mentioned in the main text. The corrected table is listed below.