External Resistor-Free Gate Configuration Phase Transition FDSOI MOSFET

Gate configuration phase transition fully depleted silicon-on-insulator (FDSOI) metal- oxide-semiconductor field-effect transistor (MOSFET) without an external resistor is proposed using Pb(Zr
_0.52
Ti
_0.48
)O
₃
(PZT)-based threshold selector (TS). Under 1 μA compliance current condition, the PZT-based TS exhibits its threshold switching property at ~0.9 V (threshold voltage) and ~0.01 V (hold voltage) over 4 orders of current. And its off-resistance is measured as ~2.3 × 10
¹¹
Ω. The PZT-based gate configuration phase transition FDSOI MOSFET without an external resistor was fabricated by connecting the PZT-based TS to a baseline FDSOI MOSFET. It is confirmed that the fabricated external resistor-free phase transition FDSOI MOSFET can operate regardless of the aforementioned 1 μA of compliance current condition. This device has not only demonstrated the feature of ~4 mV/decade subthreshold slope at ~0.96 V of gate voltage, but it also has decreased the gate leakage current of the baseline FDSOI MOSFET by ~10 times at 0 V of gate voltage and ~320 times at 2 V of gate voltage.