A Multi-timescale Prediction Model of IGBT Junction Temperature

Based on the features of different timescales and according to the characteristics of loss and heat transfer under those cases, a multi-timescale prediction model (MTPM) of insulated gate bipolar transistor (IGBT) junction temperature is presented in this paper, including a short-duration transient microsecond prediction model based on the semiconductor physical model and the theorem of heat absorption and emission, an unsteady millisecond-scale prediction model based on the equivalent switching loss set in databook and the order-reduced thermal model, and a steady second-scale prediction model based on the characteristics of a fundamental wave fluctuating periodically at junction temperature and the equivalent first-order thermal model. An experimental system has been designed and established for the verification of the proposed MTPM of IGBT junction temperature according to a corresponding timescale. The comparison result shows that the error between simulation and experiment is less than 5% and simulation efficiency is significantly improved.