A 0.35 /spl mu/m trench gate MOSFET with an ultra low on state resistance and a high destruction immunity during the inductive switching

This paper describes performance of 20 V class N-channel MOSFET using 0.35 /spl mu/m trench gate structure. It has two characteristics mainly. The first is an ultra low on state resistance by shrinking the trench gate width and increasing cell densities. The other is a high destruction immunity during the inductive switching by optimizing a trench depth. The measured specific on-resistance (Ron,sp) is 25% reduction comparing conventional one. Furthermore, this device can provide high avalanche current density during the inductive switching of JD=30 A/mm/sup 2/.