Comparison of stripe and cellular geometry for short circuit rated trench IGBT

600 V trench IGBTs with various cell structures including cellular and stripe geometry are implemented and their device characteristics are compared in terms of short-circuit ruggedness and device performances. The cellular IGBT which employs n+ source EBR and channel generated EBR shows 18 /spl mu/s of SCWT and 1.7 V of Vce,sat while the stripe IGBT shows 16 /spl mu/s and 1.8 V, respectively. Experimental results show that cellular geometry trench IGBT exhibits better short-circuit immunity than the stripe geometry.