High-Performance ReS2 FET for Optoelectronics and Flexible Electronics Applications

In this letter, we introduce field-effect transistors (FETs) built with ReS₂ on engineered flexible substrate. Excellent electrical behaviors have been obtained including high mobility, low subthreshold swing, and large on/off ratio. The optoelectronics and flexible electronics applications of the ReS₂ FETs have been studied. The FET-based photodetector exhibited photoresponsivity up to 25.3 AW^-1. Great mechanical properties have also been achieved under various strain conditions. Such excellent performance is comparable to the well-developed Si-based devices and is due to the remarkable inherent material properties of ReS₂ and optimized device structure engineering on flexible substrate.