Robust ultrathin oxynitride dielectrics by NH3 nitridation and N/sub 2/O RTA treatment

In this paper, a method to grow robust ultrathin (E/sub OT/=28 /spl Aring/) oxynitride film with effective dielectric constant of 5.7 is proposed. Samples, nitridized by NH/sub 3/ with additional N/sub 2/O annealing, show excellent electrical properties in terms of very low bulk trap density, low trap generation rate, and high endurance in stressing. This novel dielectric appears to be very promising for future ULSI devices.