Boosted gate MOS (BGMOS): device/circuit cooperation scheme to achieve leakage-free giga-scale integration

This paper proposes a new device and circuit scheme that drastically suppresses the stand-by leakage current for the deep sub-0.1 /spl mu/m era while maintaining the circuit speed. Applying boosted gate voltage on the low leakage switches with higher V/sub th/ and thicker T/sub ox/, extremely low stand-by power for battery type application is achieved, while degradation of circuit performance and an increase of area overhead are sufficiently suppressed. The combination with a negative gate voltage scheme and the application of the boosted voltage scheme to SRAMs are also discussed.