Effect of Interface Layer Engineering on Resistive Switching Characteristics of ZrO2-Based Resistive Switching Devices

An intentionally introduced interface layer in the resistive random-access memory (RRAM) devices play an important role in the improvement of resistive switching characteristics. In this paper, the resistive switching characteristics of ZrO
₂
-based RRAM devices by inserting a thin TiO
₂
interface layer between electrodes and ZrO
₂
resistive switching layer were investigated. Compared with the Cu/ZrO
₂
/Pt and Cu/ZrO
₂
/TiO
₂
/Pt devices, the Cu/TiO
₂
/ZrO
₂
/Pt and Cu/TiO
₂
/ZrO
₂
/TiO
₂
/Pt devices showed much improved programing voltages, including lower forming voltage and lower set voltage. Moreover, the reset current was also improved. These results indicate that the TiO
₂
interface layer between the anode electrode and the resistive switching layer plays an important role in improving device performance.