Low-Temperature MoS2 Film Formation Using Sputtering and H2S Annealing

Low-carrier density and high-crystallinity molybdenum disulfide (MoS
₂
) films were fabricated by low-temperature and clean process based on a UHV RF sputtering system. This paper focuses on improving crystallinity and reducing the number of sulfur defects of sputtered-MoS
₂
film. We have fabricated MoS
₂
films at lower than 400°C using the sputtering and H
₂
S post-deposition annealing processes. Consequently, MoS2 films with high crystallinity and appropriate S/Mo ratio were obtained. Eventually, a low carrier density of 3.5
$\times 10^{17}$
cm
⁻³
and the Hall-effect mobility of 12 cm
$^{2}\text{V}^{-1}\text{s}^{-1}$
were achieved.