A comparison of channel indium content in low noise metamorphic HEMTs with In/sub x/Ga/sub 1-x/As (0.3

GaAs metamorphic HEMTs promise to be the next generation of transistor technology to fill the emerging demand for high performance millimeter-wave low noise devices. This paper will present the first exploration of InGaAs HEMTs with various indium contents between 19% to 60%. F/sub min/ and associated gain data from pHEMTs with 19% indium and MHEMTs with 33%, 43%, 53% and 60% indium channels will be presented.